Abstract
Photocapacitance (PHCAP) measurements are applied to liquid-phase epitaxially grown n- Al0.3Ga0.7As crystals at different temperatures. The PHCAP measurements revealed deep levels optically located at 0.5 eV below the conduction band and 1.5 eV above the valence band [Ec−0.5 eV level (Te-related DX center) and Ev+1.5 eV level]. The thermal activation energy of electron capture at the ionized Ec−0.5 eV level was found to be 31 meV. The optical hole emission process from the Ev+1.5 eV level was enhanced with increasing sample temperature. After 1.5 eV monochromatic light preirradiation, the Ec−0.5 eV level was detected in an intentionallly undoped n-Al0.3Ga0.7As sample. From these results, the structure of the Te-related DX center is discussed.
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