Abstract
AbstractPhotocapacitance techniques have been used to study the electronic properties of (In,Ga)N/GaN quantum wells (QWs). Negative differential capacitance (NDC) features were observed at room temperature for the first time in capacitance‐voltage (C‐V) experiments under optical excitation. A detailed analysis of the results seems to indicate that charge accumulation in quantum dot‐like structures embedded in the QWs could be responsible of such behaviour. Polarization field effects present in these structures are detected through C‐V hysteresis, allowing to estimate built‐in electric fields as high as 1.9 MV/cm in 14% In QWs. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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