Abstract
This work describes a multilayer tungsten oxide photoanode synthesized via facile dip-coating deposition solution for sunlight-driven water oxidation reaction. The number of layers (three, five and ten) followed by a successive annealing process at each deposited layer has strongly influenced their performance. The ten-layers tungsten oxide photoanode exhibited the highest photocurrent density around 0.7 mA/cm2 at 1.23 VRHE, under sunlight irradiation. This photocurrent response corresponds to 17% of solar-to-hydrogen conversion efficiency (STH) from the maximum theoretical predicted for tungsten oxide (4.8%). The successive annealing treatment promoted a reduction in the number of grain boundaries, yielding in higher film porosity and surface roughness, which decreased the charge transfer resistance and the electron-hole recombination rate.
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