Abstract
Photoacoustic saturation spectra in some semiconductors as HfSe 2, ZrS 2 and HfS 2 have been measured at energies above the fundamental absorption edge, where the photoacoustic signal is independent of the optical coefficient and the dips detected in the photoacoustic spectra may be ascribed to optical reflection effects inherent to the band structure. The comparison between our experimental data and those obtained by means of conventional and modulatory spectroscopic techniques proves that such method is a useful tool in order to determine the electronic structure of photoacoustically active semiconductors.
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