Abstract
The photoacoustic spectra in GaSe, GaTe and InSe semiconductors have been measured in the region of energy greater than the fundamental absorption edge. In this range the photoacoustic signal magnitude can be regarded as independent of the absorption coefficient, i.e. photoacoustic spectroscopy in saturation region, and the dips in the spectra are ascribed to the optical reflection effect inherent in semiconductors interband transitions. The photoacoustic signal phase spectra have been also measured; they are shown to be a useful check of the structures observed in the magnitude saturation spectra. The experimental results are in good agreement with the allowed interband transition energies as observed in thermo-reflectance, electroreflectance and normal reflectivity experiments.
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