Abstract
The photoabsorption properties of InAs wire structures have been investigated through photoinduced current (PIC) measurements by a dual light illumination method in scanning tunneling microscopy. On InAs wires with a width of around 50 nm, the dependences of the PIC signal on incident photon energy and on a light polarization were examined. A steplike shape in the photoabsorption spectrum, obtained from the photon energy dependence, as well as weak polarization dependence indicate that this wire structure behaved like a quantum well because of a weak lateral confinement effect. On the other hand, apparent polarization dependence was observed on the InAs wires with a width of around 25 nm, which is attributable to an enhancement of structural anisotropy in the thinner wire.
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