Abstract
We calculate the absorption at the band-gap edge due to excitons in InGaAs-GaAs superlattice quantum wells. We use a finite square well model and investigate the dependence of the calculated exciton states on the parameters in the model. The behavior of the absorption coefficient as a function of the strength of an electric field applied perpendicular to the layers is investigated and we find that the results of the model give a good description of the measurements of the absorption coefficient on InGaAs-GaAs quantum wells.
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