Abstract
We calculate the absorption at the band-gap edge due to excitons in InGaAs-GaAs superlattice quantum wells. We use a finite square well model and investigate the dependence of the calculated exciton states on the parameters in the model. The behavior of the absorption coefficient as a function of the strength of an electric field applied perpendicular to the layers is investigated and we find that the results of the model give a good description of the measurements of the absorption coefficient on InGaAs-GaAs quantum wells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
