Abstract
A theoretical method to simulate the birefringence induced by asymmetric strain and electric field in multiple quantum well structures (MQWs) is presented. In the presence of surface acoustic waves (SAW), the strain-induced band mixing in MQWs results in refractive index changes as a function of the polarization of incidence beam normal to the quantum well plane. Band mixing is sensitive to the well structure and intrinsic strain in MQWs. In this paper, we investigate the influence of various parameters on the birefringence in the InGaAs-GaAs quantum wells, and optimize the design of our acoustic-optic modulator operating near 980 nm.
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