Abstract
The velocity of piezoelectrically-active, ultrasonic shear waves measured between 4.2 K and 60 K for oxygen-doped n-type GaAs, during and after illumination at 4.2 K, reveal photoconductivity, persistent photoconductivity, and thermally-stimulated conductivity. Analysis of these effects yields information about photoionizable and trapping levels in the forbidden gap which seem to be associated with oxygen.
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