Abstract
We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS2 films. Photo-voltaic effect was observed in single layer MoS2 without any apparent rectifying junctions, making device fabrication straightforward. For bi-layers, no such effect was present, suggesting strong size effect in light-matter interaction. The photo-voltaic effect was observed to highly direction dependent in the film plane, which suggests that the oblique deposition configuration plays a key role in developing the rectifying potential gradient. To the best of our knowledge, this is the first report of any large area and transfer free MoS2 photo device with performance comparable to their exfoliated counterparts.
Highlights
We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS2 films
While the existing literature on mono or fewlayer MoS2 opto-electronics promise revolutionary capabilities of generation devices, all these studies are performed on exfoliated flakes
Since exfoliation is not a sustainable path beyond basic science, there is a critical need for large area growth of mono-layer MoS2 and its opto-electronic characterization
Summary
We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS2 films. While the existing literature on mono or fewlayer MoS2 opto-electronics promise revolutionary capabilities of generation devices, all these studies are performed on exfoliated flakes.
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