Abstract
In the present study, a novel higher quality In2S3: Y (0, 1, 2, 3, 4, and 5 wt%) thin films were prepared using the nebulizer-aided spray pyrolysis process for photo sensor applications. The association between the concentration of precursor doping and several distinguishing characteristics in the 0–5% range was examined. The produced films were characterized for microstructure, morphology, composition, and optical and fabricated device's photodetection characteristics. X-ray diffraction pattern confirms the cubic phase of In2S3 with a preferential orientation along (400). FESEM (field emission scanning electron microscope) revealed the formation of nanograins with dot-like particles. Additionally, adding 2% Y in2S3 film increases the UV absorption and lowers the energy gap from 2.74 to 2.69 eV. Three emission peaks at 330, 345, and 525 nm were visible in the Photoluminescence spectra, confirming the existence of more defects with 2%Y dopant. The fabricated samples demonstrated remarkable U.V. photoresponse and photoelectric characteristics at 5 V bias voltage. The highest response (4.49 10−1 A/W), detectivity (3.23 1011 Jones), external quantum efficiency (105%), and rapid photoswitching speed were observed for 2% Y doped In2S3film. We further verified that the UV photo-sensing properties were considerably altered by the concentration of the Yttrium dopant used.
Published Version
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