Abstract
A photo-resist trim process has been developed and successfully implemented in industrial production lines for sub 0.1 μm low power, high speed performance devices using conventional 0.13 μm masks. This technique uses Cl 2/O 2 mixture plasma generated by a transform coupled plasma (TCP) source. The process parameters, such as TCP power, substrate bias power, and working pressure, have been optimized to obtain a high resist trim effect. The quality of the etched features was accessed by the critical dimension (CD) linearity and uniformity. The electrical properties of metal-oxide-semiconductor (MOS) transistors made by this technique were also measured and compared. Different test keys and devices fabricated by the photo-resist trim technique were investigated. Promising results of CD linearity, uniformity, and electric properties have been obtained.
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