Abstract
Photo-stimulated interdiffusion in a-Se/As2S3 amorphous chalcogenide nano-multilayers (ANML) is known as a useful method for amplitude-phase optical relief formation besides the known amorphous–amorphous or amorphous–crystalline photo-induced structural transformations (PST) in homogeneous chalcogenide layers, but it has a relatively narrow sensitivity spectral range and small amplitude modulation. Experimental evidences of improvement of optical recording processes were obtained in Te-, Bi-, Sb-containing nano-layered structures based on As2S3 matrix. The influence of nano-structuring and combination of components on the sensitivity, type of the recorded relief is discussed.
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