Abstract
AbstractCombined TSC and PICTS measurements have been used to determine the activation energies (Et) and capture cross-sections (σ) of the trap levels inside the bandgap of CVD diamond in the energy range 0.4−0.7 eV. High temperature TSC analysis has been performed to determine the trap parameters in the energy range from 0.9 to 1.3 eV. A fieldmap in the Et−σ plane has been obtained from the combination of the TSC and PICTS data depicting the regions corresponding to two isolated trap levels and to a continuous distribution of states. The concentrations of defects have been calculated from the TSC signals and the measurement of the charge collection efficiency of the diamond samples.
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