Abstract
AbstractPhoto-induced changes in the hysteresis behavior of sol-gel derived Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)03 (PLZT) films have been characterized. The film photosensitivity has been evaluated with respect to the magnitude of the effects, the time response and the spectral dependence. Photo-induced hysteresis changes exhibit a stretched-exponential time dependence, which implies a dispersive mechanism. The spectral dependence is strongly peaked at the band edge (∼3.4 eV), which indicates that generation of electron-hole pairs in the material is critical. The photo-induced hysteresis changes are reproducible and stable, which indicates that the controlling charge traps are stable. However, improvements in film photosensitivity will be required to develop these materials for optical memory applications.
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