Abstract
High-quality SiO/sub 2/ was successfully deposited onto AlGaN by photochemical vapor deposition (photo-CVD) using a D/sub 2/ lamp as the excitation source. The resulting interface state density was only 1.1 /spl times/ 10/sup 11/ cm/sup -2/eV/sup -1/, and the oxide leakage current was dominated by Poole-Frenkel emission. Compared with AlGaN-GaN metal-semiconductor HFET (MESHFETs) with similar structure, the gate leakage current is reduced by more than four orders of magnitude by using the photo-CVD oxide layer as gate oxide in AlGaN-GaN metal-oxide-semiconductor heterojunction field-effect transistors (MOSHFETs). With a 2-/spl mu/m gate, the saturated I/sub ds/, maximum g/sub m/ and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET were 572 mA/mm, 68 mS/mm, and 8 V, respectively.
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