Abstract
This paper reviews the technique of photochemical‐assisted vapor deposition (photo‐CVD), and its applications in silicon IC processing. The photo‐CVD process deposits films (PHOTOX™) at temperatures as low as 50°C. The deposition process, the resulting film properties, and the use of PHOTOX for lateral isolation among transistors and vertical isolation between two‐level interconnects are discussed. A novel process employing PHOTOX deposition in conjunction with a photoresist liftoff can be used to achieve totally isoplanar isolation. Photo‐CVD can also be extended to produce other dielectrics such as silicon nitride and aluminum oxide.
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