Abstract
The achievement of high efficiencies for crystalline silicon solar cells is highly dependent on the reduction of carrier recombination at both cell surfaces. As a new era in PV, this loss of charges can be minimized by simply depositing silicon nitride or aluminum oxide layers at low temperatures. Due to their fascinating properties, both dielectric films became key components of present and future monofacial and bifacial silicon solar cells. As a special highlight, by an innovative aluminum oxide-based rear side scheme, high efficiency industrial cells (PERC) could be developed which are generally regarded to become next-generation solar cells.
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