Abstract
The paper presents models of bands (levels) in solid (SiC)1-x(AlN)x luminescence centers and n-SiC/p-(SiC)1-x(AlN)x heterostructures (light-emitting diodes). The diagram of (SiC)1-x(AlN)x energy gaps shows the positions of luminescence levels, subject to x. A SiC/SiC–AlN series of electroluminescence bands, for the first time, is found to have a continuous relationship between the positions of short-wave and long-wave band maxima in a K-minimum conduction band, respectively, as continuous functions of contact current density.
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