Abstract
Under selective photo-excitation, the capacitance response of internal tunnellingcoupling in quantum-dots-imbedded heterostructures is studied to clarify theelectronic states and the number densities of electrons filling in the quantumdots (QDs). The random nature for both optical transitions and the fillingin a QD assembly makes highly resolved capacitance peaks appear in theC–V characteristic after turning off the photo-excitation.
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