Abstract
Selectively photo-excited C–V spectroscopy has been measured in an In0.5Ga0.5As quantum dots (QDs)-embedded, three barrier–two well heterostructure. By comparing with a theoretical capacitance model, the pure capacitive contribution from In0.5Ga0.5As QDs, due to tunnelling coupling between In0.5Ga0.5As QDs and In0.18Ga0.82As quantum well, has been used to obtain the density of charges from photo-excited In0.5Ga0.5As QDs in a very straightforward manner.
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