Photo- and electro-luminescence studies of semipolar (112¯2) InxAl1−xN

Abstract

InxAl1−xN (0.15 < x < 0.4) single layers (thickness = 300 nm) and light emitting diodes (LEDs) with InxAl1−xN (x = 0.24 or 0.28) quantum wells (QWs) were grown on (112¯2) free-standing GaN substrates by metal organic chemical vapor deposition. The emission characteristics of InxAl1−xN films and QWs were then investigated by photoluminescence (PL), cathodoluminescence (CL), and electroluminescence (EL). PL emission down at 1.87 eV (∼660 nm) was observed from In0.37Al0.63N at room temperature. However, its emission wavelength and spectral width showed almost no temperature-dependence, strongly suggesting the radiative recombination process in In0.37Al0.63N is heavily affected by the potential fluctuations associated with the defect levels such as deep donor–acceptor pairs (DAPs). For In0.23Al0.77N, the emission peaks at 3.24 and 2.4 eV were observed at 300 K but CL showed no evidence of compositional fluctuations. Given the wide spectral width and weak In clustering, PL at 3.24 eV is likely from a shallow DAP transition involving an impurity-related shallow donor and valence band. PL emission at 2.4 eV, on the other hand, behaved more like In0.37Al0.63N, suggesting significant deep DAP transitions. Both LEDs with In0.24Al0.76N and In0.28Al0.72N QWs showed a discrete blueshift of the emission peak with increasing injection current, which is very different from the gradual shift observed in InGaN LEDs. The high-energy peak was much narrower than the low-energy peak, suggesting it could be the near-band edge emission. Si doping of In0.24Al0.76N QWs lowered the injection current level at which the high-energy peak appears.