Abstract
SiC:Er2O3 films with different ratios of SiC to SiC:Er2O3 are deposited on p-type Si substrates by the magnetron co-sputtering technique, which was fully compatible with current Si processing technologies. Intense room temperature 1.54 μm photoluminescence (PL) from Er3+ ions in the SiC:Er2O3 films is observed and the PL intensity at 1.54 μm is enhanced by about 40 times with increasing Er concentration in the films from 0.8 to 22 at.% under both direct and indirect excitations. The 1.54 μm electroluminescence from the structure of indium tin oxide (ITO)/n+ -Si/SiC:Er2O3/p-Si with suitable ratios of SiC to SiC:Er2O3 is measured under forward biases.
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