Abstract
Low energy phosphorus ions (28 keV) have been implanted into type 2A natural diamond at a temperature of 800°C. Implanted diamond was characterized with 1.4 MeV He ion RBS and channeling measurements. For diamond substrate, the lowest χ min was observed along the 〈110〉 axis ( χ min=9%). For the 〈100〉 and 〈111〉 axes, the χ min was 23% and 28% respectively. For implanted phosphorus, the χ min was 45% for 〈110〉, 65% for 〈100〉 and 60% for 〈111〉. It is considered that the large size difference (43%) between phosphorus and carbon atoms is one of the major factors which prevents phosphorus atoms from obtaining high substitutionality in the diamond lattice.
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