Abstract
Sequential implants of Ti and O ions into Al 2O 3 lead to stabilisation of Ti in the optically active 3+ oxidation state when suitable implantation and annealing conditions are used. The presence of Ti 3+ in sapphire gives rise to luminescence over the wavelength range ∼650–1100 nm and is the basis of the broadly tunable Ti:sapphire laser. We present results of Rutherford backscattering spectrometry and ion channeling (RBS-C) measurements which show the structural changes that accompany increases in the Ti 3+ luminescence yield during post-implantation thermal processing of Ti/O implanted sapphire substrates. Complementary information is provided by proton induced X-ray emission and channeling measurements indicating the lattice location of the Ti atoms.
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