Abstract
Epitaxial layers of GaAs and GaAsxP1−x were deposited under a variety of conditions using a remote plasma in a metal-organic chemical vapor deposition (MOCVD) reactor. The remote rf plasma dissociated AsH3 and PH3 into highly reactive radicals increasing the growth rate at low temperatures and increasing the phosphorus incorporation at temperatures below 850° C. GaAsxP1−x with a high P content could be grown at low deposition temperatures by using the plasma to increase the reactivity of PH3. The growth rate of both GaAs and GaAsxP1−x was increased at low temperatures and GaAsxP1−x was grown at temperatures down to 550° C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
