Abstract

Facilitating charge separation and transport of semiconductors is pivotal to improving their solar-to-hydrogen conversion efficiency. To this end, manipulating the charge dynamics via element doping has attracted much attentions. Here, we doped phosphorus (P) into two-dimensional (2D) single-crystalline quaternary sulfide (SCQS) nanobelts, enabling significantly enhanced photocatalytic H2 production. By carefully studying the carrier dynamics after P doping, we found that the introduction of P leads to a narrowed band gap, inhibits the recombination of photogenerated carriers, and increases the electric conductivity, all of which contributed to their improved catalytic performance. Meanwhile, the inherited single-crystalline structure and exposed (0001) facet favors carrier transport and photocatalytic hydrogen production. It has been found that the P-doped Cu-Zn-In-S (CZIS) nanobelts exhibit a visible-light photocatalytic hydrogen production rate of 12.2 mmol h-1 g-1 without cocatalysts, which is 3.5-fold higher than that of pristine CZIS nanobelts. Moreover, the P doping strategy is proven to be common to other semiconductors, such as single-crystalline Cu-Zn-Ga-S (CZGS) nanobelts. Our work provides an efficient way to manipulate charge carriers and will help develop high-efficiency photocatalysts.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.