Abstract
A significant increase of HF etching rate and mean surface roughness (monitored by atomic force microscopy) was observed after P ion implantation on thin thermal SiO2 films (150 Å). The dependence upon the ion fluence (in the range 3×1012–5×1013 ions/cm2) and energy (in the range 270–500 keV) was analyzed, together with the recovery effect of a postimplantation annealing in N2 atmosphere. Moreover, the impact of P implants on oxides grown by different sequences, considering postoxidation annealing in N2O or N2 atmospheres, was also studied. The effect of ion irradiation was investigated by thermally stimulated luminescence (TSL) above room temperature in order to obtain information on point defects present in the layers. The results showed that postoxidation annealing treatments in N2 atmosphere carried out not only after, but also before ion implantation, were particularly useful in order to lower the concentration of TSL active defects. This can be interpreted as a role of N2 annealing in favoring a structural rearrangement of the SiO2 layers.
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