Phosphorene nanoribbon field effect transistor with a dual material gate

Abstract

In this paper, we present a dual-material gate phosphorene nanoribbon field-effect transistor (DMG-PNRFET) that combines the advantages of a PNRFET with a DMG configuration. In this structure, the difference in the work function creates an extra barrier for band-to-band tunneling from the valence band (VB) to the conduction band (CB) inside the channel leading to lower off-currents. An illustration for transmission coefficients with relevant band diagrams is included to demonstrate energy-resolved current spectrum and tunneling emissions within the transport window for both on and off-states. Results also show that DMG-PNRFET possesses a higher ION/IOFF ratio, delay, and power delay product (PDP) compared to a conventional PNRFET. Hence, the DMG-PNRFET is better suited for digital applications. Our simulations rely on combining the density functional-based tight binding method with the non-equilibrium Green’s function.