Phosphonic acid self-assembled monolayer and amorphous hafnium oxide hybrid dielectric for high performance polymer thin film transistors on plastic substrates

Abstract

A vacuum-free solution processed hybrid dielectric composed of an n-octadecyl-phosphonic acid self-assembled monolayer on amorphous sol-gel processed hafnium oxide (HfOx) is demonstrated for low-voltage polymer semiconductor-based thin film transistors (TFTs). The phosphonic acid/HfOx hybrid dielectric provides high capacitance (0.41 μF/cm2), low leakage current (5×10−8 A/cm2), and is compatible with plastic substrates. The utility of this dielectric is demonstrated by fabricating high performance polymer TFTs based on a spin coated thiophene-thiazolothiazole copolymer with operating voltages under −2 V, negligible hysteresis, subthreshold slopes as low as 100 mV/dec, and hole mobilities up to 0.11 cm2 V s.