Abstract
We have studied experimentally the nature of phonon transport in 750 nm and 200 nm thick free-standing silicon nitride (SiNx) membranes over a temperature range of 0.1–1K. Measurements were performed by using a radially symmetric DC heater and several normal metal-insulator-superconductor (NIS) tunnel junction thermometers to detect the phonon temperature Tp at several different distances from the heater. Our data indicates that phonon transport is three dimensional in both membranes, and mostly ballistic at the low temperature range of our experiment. At temperatures above 0.5 K there are indications of a transition to a more diffusive regime.
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