Abstract
We have studied the generation of acoustic phonons in GaAs/AlGaAs double barrier resonant tunnelling structures using fast pulses. The TA phonons arose primarily from decay and down-conversion of cascades of plasmon-phonon coupled modes, whilst LA phonons were emitted directly by the heated Fermi gas in the collector. Emission was asymmetric with respect to direction of carrier tunnelling due to enhanced mode conversion. Intervalley phonon emission could be identified through the anisotropy of the down-conversion products.
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