Abstract
The phonon conductivity of $n$-type germanium having intermediate donor concentration for which ${N}_{\mathrm{ex}}<{N}_{c}$ has been calculated using Mikoshiba's inhomogeneity model. In order to calculate the electron-phonon relaxation rate, we have used the expression derived by Roy and Sood for the nonmetallic region where a nonspherical donor electron wave function in the deformation potential theory has been used. And for the metallic region, we have used the expression derived by Sota and Suzuki with some modifications to take into account the realistic picture of the scattered phonons. It is observed that there is an overall good agreement between the theoretical and experimental results of phonon conductivity in As-, Sb-, and P-doped Ge at low temperature.
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