Abstract
Phonon conductivity in intermediately doped n-type silicon still remains unexplained. In this paper we have calculated the phonon conductivity in Li-doped silicon for Nex < Nc using Mikoshiba's inhomogeneity model. We have introduced spherical polar coordinates for the phonon polarization vectors in Sota and Suzuki's theory in order to take into account the realistic picture of the scattered phonons. Deformation potential for different polarizations λ has been evaluated for the metallic region. Present calculations show that Mikoshiba's inhomogeneity model is able to explain the phonon conductivity of Li-doped silicon having intermediate donor concentration very well.
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