Abstract
We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.
Highlights
We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy
The discrete energy levels in quantum dots (QDs) leads to the expectation that single-particle carrier relaxation should be very slow, unless the separation between confined states is commensurate with the longitudinal optical (LO) phonon energy (36 meV in GaAs).[1]
We report conventional photoluminescence (PL) measurements on a large ensemble of highly-uniform GaAs/AlxGa1−xAs QDs grown by droplet epitaxy.[6]
Summary
We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations.
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