Abstract
The influence of phonons on the effect of resonant electron tunneling through a dielectric layer involving local states is considered. An expression for the tunneling transmission coefficient has been obtained which is valid at arbitrary values of temperature and the strength of the electron-phonon interaction (EPI). The ratio of polaron shift on the centre to Debye frequency is shown to be the only relevant dimensionless parameter determining the contribution of EPI to the tunneling effect. The results presented enable interpretation of the experiments [3, 4] on the conductivity of tunneling contacts with amorphous silicon layers.
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