Abstract
The growth and crystallization of amorphous surface layers in silicon due to Ar + ion bombardment have been investigated with the ion channeling technique. It is shown that ion beam induced crystallization as well as further growth of the amorphous layer can occur at the crystalline-amorphous interface. The target temperature and the ion bombardment parameters, particularly the ion dose rate, determine which of the processes is predominant. The results support the model where migrating point defects in the crystalline material initiate processes for both the growth and crystallization of the amorphous layer.
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