Abstract
A model of the epitaxial chemical vapor deposition reactor has been developed based on fundamental physicochemical principles. The kinetics of the heterogeneous deposition reaction is taken into account along with transport phenomena occurring in the gas phase above the deposition surface. The obtained set of partial differential equations is solved numerically, the results being compared with a representative set of experimental data and with previously published models. The comparison demonstrates the suitability of the model conception as well as its applicability for process design purposes.
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