Abstract
Abstract In this work, the dielectric behaviour and capacitance–voltage ( C – V ) curves under an applied DC bias field of 1 wt% Nb-doped CaCu 3 Ti 4 O 12 ceramics have been studied. The dielectric properties reveal the existence of grain boundaries of different electrical nature. A new model is proposed to simultaneously explain the presence of insulating and conducting grain boundaries. At low frequency, the capacity curve of the material exhibits a double metal oxide semiconductor (MOS) capacitor-like behaviour and as the frequency is increased, the curve suffers an inversion showing a ferroelectric-like response. This behaviour does not correspond to ferroelectric domain movement phenomena but seems associated to charge accumulation on grain boundary regions.
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