Abstract
The influence of CuO on the microstructure and microwave dielectric properties of the Nd(Mg0.5Sn0.5)O3 ceramic were investigated with a view to their application in microwave devices. A CuO-doped Nd(Mg0.5Sn0.5)O3 ceramic system was prepared using the conventional solid-state method. The X-ray diffraction patterns of the CuO-doped Nd(Mg0.5Sn0.5)O3 ceramic did not significantly vary with sintering temperature. A dielectric constant of 19.5, a quality factor (Q × f) of 31,300 GHz, and a temperature coefficient of resonant frequency of −57 ppm/°C were obtained when the 0.5 wt% CuO-doped Nd(Mg0.5Sn0.5)O3 ceramic was sintered at 1400°C for 4 h.
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