Abstract
Phase transitions in doped quantum paraelectrics are studied using the transverse Ising model. In particular, effects of random fields on the temperature dependence of polarization and dielectric susceptibility are simulated. The results show that random fields are responsible for the precursor behavior observed experimentally. Simulations on the field dependence of the dielectric susceptibility are performed and the results agree with the scaling properties found on Sr1−xCaxTiO3.
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