Abstract
The transition from a dipolar electron–hole liquid (EHL) to a spatially direct one in two-dimensional layers of a type II (buffer Si1–y Ge y )/tSi/sSi1–x Ge x /tSi/(cap Si1–y Ge y ) heterostructure is studied via photoluminescence spectroscopy at helium temperatures and high excitation levels. This transition occurs when the sSi1–xGex barrier layer for electrons (a quantum well (QW) for holes), that separates electron QWs (tSi layers) gets thinner. The basic parameters of both types of EHLs and the lifetime of dipolar excitons are determined.
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