Abstract
Based on calculations within the density functional theory and an analysis of low-temperature photoluminescence spectra, the structure of electron–hole liquid in shallow Si/Si1 – xGexSi (100) quantum wells 5 nm wide with germanium content x = 3–5.5% is studied. It is shown that the energy of quasi-two-dimensional electron–hole liquid localized in quantum wells for this composition range as a function of carrier concentration exhibits two local minima. The position of the deeper (major) minimum depends on the quantum well design and controls properties of quasi-two-dimensional electron–hole liquid at low temperatures. For the series of Si/Si1 – xGexSi quantum wells, modification of properties of electron–hole liquid was experimentally shown, which can be interpreted as a change of the major minimum due to an increases in the germanium concentration in the Si1 – xGex layer. The effect of the multicomponent composition (electrons, light and heavy holes) of the electron–hole liquid on low-temperature photoluminescence spectra of Si/Si1 ‒ xGexSi quantum wells is discussed.
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