Abstract
Phase transition of a silicon-nitride (SiN) monolayer on a Si(111) surface was observed by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). The STM image showed an 8/3×8/3 regular array of dots on the Si(111)-8×8 surface. After annealing at 1030°C, the image changed to a 3/4×3/4 regular array of dots, which corresponds to the quadruplet surface. The rotation angle of one of the four quadruplet domains was directly measured and found to be about 10° with respect to the crystallographic structure of the Si(111) surface. Further annealing at 1050°C changed the 3/4×3/4 structure to the 7×7 structure, which means that the SiN monolayer decomposed and was removed from the surface completely. Overall annealing behavior observed in our STM experiments was consistent with low-energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS) data reported previously.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
