Abstract
The reflection of a probing beam with a wavelength λ=0.63 µm from a silicon surface layer (a-Si) amorphized by ion implantation was detected during its melting and solidification initiated by excimer ArF laser radiation. When the irradiation energy is below the epitaxial threshold, a single event of a-Si layer melting leads to the formation of single nanocrystals separated from one another in the amorphous matrix rather than to the appearance of polycrystalline material. The presence of nanocrystals makes possible the formation of polycrystalline Si from a melt under exposure to a second laser pulse and allows the intermediate crystallization of Si in a laser-induced sequence of phase transitions. The data obtained are compared to the results of studying the phase transitions initiated in similar experimental conditions in thin layers of hydrogenated a-Si layers on glass substrates.
Published Version
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