Phase transformation and enhanced blue photoluminescence of zirconium oxide poly-crystalline thin film induced by Ni ion beam irradiation

Deepika Gupta,Vishnu Chauhan,Nikhil Koratkar,Rajesh Kumar

doi:10.1038/s41598-021-96961-w

Deepika Gupta, Vishnu Chauhan + Show 2 more

Open Access

https://doi.org/10.1038/s41598-021-96961-w

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Abstract

Swift heavy ions (SHI) irradiation of Nickel (Ni) beam with different ions fluence bring the modifications in the functional properties of radio frequency (RF) grown zirconium oxide (ZrO2) nanocrystalline thin films. X-ray diffraction analysis affirms the monoclinic to tetragonal phase transformation and diminishing of peak at higher fluence 1 × 1014 and 2 × 1014 ions/cm2 induced by electronic excitation caused by SHI. Zirconium oxide thin films exhibit the same thickness (195 nm) of virgin and irradiated samples and whereas the nanocrystalline thin films have the elemental composition in proper stoichiometry (1:2) as analyzed by rutherford backscattering spectroscopy (RBS). Photoluminescence measurements confirm the blue emission of virgin and irradiated sample recorded at excitation wavelength 270 to 310 nm. The intensity of obtained emission bands varies with fluence which is interpreted in terms of generation and annihilation of defect centers. The characteristic Ag and Bg Raman modes of monoclinic and tetragonal ZrO2 are obtained at different positions. Moreover, the nanocrystalline ZrO2 thin films exhibits the most prominent absorption phenomenon in the visible range and the irradiation cause significant decrease in band gap to 3.69 eV compare to the virgin ZrO2 sample (3.86 eV). XPS analysis indicates the shifting of the core levels Zr 3d and O 1s towards higher binding energy and spin—orbit splitting of different states. The findings in this research justify that the irradiated thin films can be a potential candidate for designing of new materials, intense radiation environments, nuclear reactors, nuclear waste systems, clean energy sources.

Highlights

Swift heavy ions (SHI) irradiation of Nickel (Ni) beam with different ions fluence bring the modifications in the functional properties of radio frequency (RF) grown zirconium oxide (ZrO2) nanocrystalline thin films
The 100 MeV Ni ion beam irradiation induced alterations in functional properties of RF grown ZrO2 thin films have been demonstrated in a successful manner
In SHI inelastic collisions takes place follows energy transfer which leads to heating and escalation in defects takes place which is responsible for variation in PL emission bands of ZrO2 thin films

Summary

Introduction

Swift heavy ions (SHI) irradiation of Nickel (Ni) beam with different ions fluence bring the modifications in the functional properties of radio frequency (RF) grown zirconium oxide (ZrO2) nanocrystalline thin films. Modifications induced in ceramic materials by electronic excitations are the key factor for understanding the generation of defects under high energy-heavy ions irradiation impacts. Electronic sputtering caused by electronic excitation is the direct measurement of atomic displacement near the surface of the material It has been extensively studied for ceramics and oxide materials and suggested that the modifications in properties of materials are important factors for electronic sputtering which explain the larger change in yield due to larger electronic s puttering[6]. We report the evolution of modifications induced on nanometer-scale structural, optical, morphological, electronic and chemical features in ZrO2 thin films as a function of high energy different ion irradiation dose. The obtained findings in irradiated Z rO2 thin films are expected to be similar as in case of bulk samples provided that the virgin microstructural features are comparable with the irradiated samples

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