Abstract
Photoluminescence (PL) and double-crystal X-ray rocking curve (DCRC) measurements were performed to investigate the phase stability and the single phase compositional ranges in In 1− x Ga x P epitaxial layers grown on GaAs (100) substrates by liquid phase epitaxy (LPE) at 735°C. The results of the PL and DCRC measurements show that the PL peak energy at 17 K vary linearly from 1.967 to 1.997 eV and the lattice-mismatch at 300 K from +0.38 to −0.17%, according to the Ga mole fraction in the growth melts. These results indicate that the composition pulling phenomena do not occur in LPE growth of the In 1− x Ga x P epitaxial layers on the GaAs (100) substrates. The phase stability and the single phase compositional ranges in In 1− x Ga x P/GaAs strained heterostructures are also discussed.
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