Abstract
InGaN/GaN multiple quantum wells (MQW) and high-brightness MQW light-emitting diodes were grown by production scale metal-organic chemical vapor deposition (MOCVD). We have found that the extent of InGaN phase separation in InGaN MQWs depends strongly on growth conditions. Multiple peaks in photoluminescence (PL) of InGaN/GaN MQWs and electroluminescence (EL) of MQW LEDs can be observed at room temperature. In the presence of InGaN phase separation, photoluminescence of MQW is red-shifted with respect to the expected wavelength calculated for the apparent indium composition determined by X-ray diffraction (XRD). We have determined that InGaN phase separation is necessary for high brightness electroluminescence in LEDs. Under optimal growth conditions, MQWs with very well-defined XRD satellite peaks and PL in the wavelength range of (450–520 nm) can be achieved. High-brightness LEDs emitting at 480 nm have been successfully fabricated with an output power well better than 2 mW at 20 mA and with a forward voltage less than 4 V.
Published Version
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