Abstract
We present a high-resolution x-ray-scattering study of the temperature-dependent structure of Si(111) vicinally miscut by 4\ifmmode^\circ\else\textdegree\fi{} along the ă11\ifmmode\bar\else\textasciimacron\fi{}0ă direction. At temperatures below 1159 K, the surface phase separates into flat 7\ifmmode\times\else\texttimes\fi{}7 terraces and densely stepped regions, in agreement with previous reports. The angle between the phase-separated regions shows a temperature dependence consistent with both entropic and strain-induced step-step repulsive interactions. At temperatures above 1159 K, the surface is shown to exist as a single, logarithmically rough phase; the observed scattering line shapes demonstrate the presence of a long-range step-step repulsion of a magnitude comparable to the entropic repulsion.
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