Abstract
An approach to time-domain terahertz reflection spectroscopy is proposed and demonstrated. It allows one to obtain very accurately the relative phase of a reflected THz wave form, and consequently the complex dielectric function can be precisely extracted. The relevant setup was demonstrated to allow measurements of a variety of samples: we present results for doped silicon and for ferroelectric SrBi2Ta2O9 (bulk ceramics as well as thin film on sapphire substrates).
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